Semiconductor apparatus
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChyi-Tsong NI, I-Shi WANG, Hsin-Kuei LEE, Ching-Hou SU
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Abstract
A method of integrated circuit fabrication is provided, and more particularly fabrication of a semiconductor apparatus with a metallic alloy. An exemplary structure for a semiconductor apparatus comprises a first silicon substrate having a first contact comprising a silicide layer between the substrate and a first metal layer; a second silicon substrate having a second contact comprising a second metal layer; and a metallic alloy between the first metal layer of the first contact and the second metal layer of the second contact.
Claims25
A semiconductor apparatus comprising:
- a first silicon substrate having a first contact comprising a silicide layer between the substrate and a first metal layer;
- a second silicon substrate having a second contact comprising a second metal layer;
- and
- a metallic alloy between the first metal layer of the first contact and the second metal layer of the second contact.
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A semiconductor apparatus comprising:
- a first silicon substrate;
- a second silicon substrate;
- a first contact structure between the first silicon substrate and the second silicon substrate;
- a second contact structure between the first silicon substrate and the second silicon substrate, wherein each of the first and second contact structures comprise:
- a first contact region comprising a silicide layer between the substrate and a first metal layer;
- a second contact region comprising a second metal layer;
- and
- a metallic alloy between the first metal layer of the first contact region and the second metal layer of the second contact region;
- and
- a micro-electrical mechanical system (MEMS) device positioned between the first contact structure and the second contact structure.
Dependencies are inferred from the claim text.