US 2012/0235299 A1 · SEMICONDUCTOR DEVICE CONTACT STRUCTURES AND METHODS FOR MAKING THE SAME

Abstract

A semiconductor contact structure and method provide contact structures that extend through a dielectric material and provide contact to multiple different subjacent materials including a silicide material and a non-silicide material such as doped silicon. The contact structures includes a lower composite layer formed using a multi-step ionized metal plasma (IMP) deposition operation. A lower IMP film is formed at a high AC bias power followed by the formation of an upper IMP film at a lower AC bias power. The composite layer may be formed of titanium. A further layer is formed as a liner over the composite layer and the liner layer may advantageously be formed using CVD and may be TiN. A conductive plug material such as tungsten or copper fills the contact openings.

Claims20

Dependent claims

A method for forming a contact structure in a semiconductor device, comprising:

providing a semiconductor device substructure with a dielectric layer having a plurality of contact openings extending therethrough, each said contact opening terminating at a respective bottom surface, at least one said bottom surface being a silicide surface and at least one said bottom surface being a further surface;
forming a composite base layer on said respective bottom surfaces using a multi-step IMP (ionized metal plasma) deposition process, said composite base layer including a lower layer of a first material formed using a high AC bias power and an upper layer of said first material formed using a low AC bias power, said high AC bias power greater than said low AC bias power;
forming a layer of a second material on said composite base layer using chemical vapor deposition (CVD);
and
depositing a conductive plug material in said plurality of contact openings and contacting said layer of second material.

2 more elements

Dependencies are inferred from the claim text.

Semiconductor device contact structures and methods for making the same

Life of this patent

Semiconductor device contact structures and methods for making the same

Life of this patent

Abstract

Claims20