Ic devices having tsvs including protruding tips having imc blocking tip ends
AssigneeTexas Instruments Incorporated
InventorsJeffrey A. West, Young-Joon Park
Life of this patent
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AssigneeTexas Instruments Incorporated
InventorsJeffrey A. West, Young-Joon Park
Estimating the term…
A through substrate via (TSV) die includes a plurality of TSVs including an outer dielectric sleeve, an inner metal core and protruding TSV tips including sidewalls that emerge from the TSV die. A passivation layer lateral to protruding TSV tips is on a portion of the sidewalls of protruding TSV tips. The passivation layers is absent from a distal portion of protruding TSV tips to provide an exposed portion of the inner metal core. The TSV tips include bulbous distal tip ends which cover a portion of the TSV sidewalls, are over a topmost surface of the outer dielectric sleeve, and have a maximum cross sectional area that is ≧25% more as compared to a cross sectional area of the protruding TSV tips below the bulbous distal tip ends.
A through silicon via (TSV) die, comprising:
An integrated circuit (IC) device, comprising:
Dependencies are inferred from the claim text.