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AssigneeKabushiki Kaisha Toshiba
InventorsAkira TOMONO, Tetsuya KUROSAWA, Tsutomu FUJITA, Mika KIRITANI, Shinya TAKYU
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According to one embodiment, a semiconductor device manufacturing method is disclosed. The method comprises (a) forming cut grooves in a front surface of a semiconductor wafer on which semiconductor elements are formed to partition the front surface into a plurality of regions, (b) disposing partly a resin in the cut grooves, (c) adhering a protection tape on the front surface of the semiconductor wafer, (d) thinning the semiconductor wafer by grinding a rear surface of the semiconductor wafer to reach the cut grooves, (e) forming an adhesive agent layer on the rear surface of the semiconductor wafer, and (f) dividing the semiconductor wafer into a plurality of semiconductor chips by cutting the adhesive agent layer together with the disposed resin along the cut grooves.
A manufacturing method of a semiconductor device, comprising:
A semiconductor device, comprising a semiconductor chip configured to provide a rectangular plan shape, the semiconductor chip having a semiconductor element disposed on a front surface thereof and an adhesive agent layer disposed on a rear surface thereof,
A semiconductor device, configured to be manufactured by a method, the method comprising:
Dependencies are inferred from the claim text.