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AssigneeRenesas Electronics Corporation
InventorsHisao Shigihara, Hiromi Shigihara, Akira Yajima
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Adhesive strength between a rewiring and a solder bump is improved in a semiconductor integrated circuit device in which a bump electrode is connected to a land section of the rewiring. The land section 20A of the rewiring 20 is formed by a five-layer metal film (a barrier metal film 13, a seed film 14, a Cu film 15, a first Ni film 16, and a second Ni film 17) constituting the rewiring 20, the uppermost-layer second Ni film 17 has a larger area than that of the other metal films (the barrier metal film 13, the seed film 14, the Cu film 15, and the first Ni film 16). A solder bump 21 is connected to the surface of the second Ni film 17. At the end portion of the solder bump 21, a polyimide resin film 22 is formed directly under the second Ni film 17.
A semiconductor integrated circuit device comprising:
A semiconductor integrated circuit device comprising:
A semiconductor integrated circuit device, comprising:
A semiconductor integrated circuit device comprising:
A semiconductor integrated circuit device, comprising:
A method of manufacturing a semiconductor integrated circuit device, comprising the steps of:
A semiconductor integrated circuit device, comprising:
A semiconductor integrated circuit device comprising:
A semiconductor integrated circuit device comprising:
A semiconductor integrated circuit device comprising:
A semiconductor integrated circuit device comprising:
Dependencies are inferred from the claim text.