Electrode treatments for enhanced dram performance
AssigneeIntermolecular, Inc.
InventorsXiangxin Rui, Hanhong Chen, Edward Haywood, Sandra Malhotra, Takashi Arao, Naonori Fujiwara, Toshiyuki Hirota, Takakazu Kiyomura, Kenichi Koyanagi
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Abstract
A method for fabricating a dynamic random access memory capacitor is disclosed. The method may comprise depositing a first titanium nitride (TiN) electrode; creating a first layer of titanium dioxide (TiO2) on the first TiN electrode; depositing a dielectric material on the first layer of titanium dioxide; and depositing a second TiN electrode on the dielectric material.
Claims24
A method for fabricating a dynamic random access memory capacitor, the method comprising:
- depositing a first titanium nitride (TiN) electrode;
- creating a first layer of titanium dioxide (TiO2) on the first TiN electrode;
- depositing a dielectric material on the first layer of TiO2;
- and
- depositing a second TiN electrode on the dielectric material.
A method for fabricating a dynamic random access memory capacitor, the method comprising:
- depositing a first titanium nitride (TiN) electrode;
- applying a surface treatment to the first TiN electrode;
- depositing a dielectric material on the treated surface of the first TiN electrode;
- and
- depositing a second TiN electrode on the dielectric material.
A dynamic random access memory (DRAM) capacitor, comprising:
- a first titanium nitride (TiN) electrode;
- a first layer of titanium dioxide (TiO2) created on a surface of the first TiN electrode;
- a dielectric material on the first layer of TiO2;
- and
- a second TiN electrode deposited on the dielectric material.
Dependencies are inferred from the claim text.