Solid-state image sensing device

Abstract

According to one embodiment, there is provided a solid-state image sensing device including a photodiode in which a semiconductor region of a first conductivity type formed on a substrate and a semiconductor region of a second conductivity type which is different from the first conductivity type is made as a PN junction. The semiconductor region of the first conductivity type has a first semiconductor region and a plurality of second semiconductor regions. Either of the first semiconductor region and each of the second semiconductor regions is formed by a material containing Si as a main component. The other of the first semiconductor region and each of the second semiconductor regions is formed by a material containing Si1-xGex (0<x≦1) as a main component. Each of the plurality of second semiconductor regions is provided in a shape of an island over the first semiconductor region.

Dependencies are inferred from the claim text.