Photodiode of the type avalanche photodiode
AssigneeSvedice AB
InventorsJacob Larsson, Niclas Carlsson
Life of this patent
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Abstract
A front-illuminated avalanche photodiode (APD) includes an opening (16) for incident light, a number of various semiconductor layers from the opening and downwards including a multiplication layer (7), a field-control layer (8) and an absorption layer (10), where the absorption layer is arranged to absorb photons. Under the absorption layer (10) there is at least one Bragg mirror (14) arranged to reflect photons, that have passed the absorption layer (10) from the opening back to the absorption layer.
Claims5
1-6. (canceled)
A front-illuminated avalanche photodiode (APD) comprising an opening (16) for incident light, comprising a number of various semiconductor layers from the opening and downwards comprising a multiplication layer (7), a field-control layer (8) and an absorption layer (10), where the absorption layer is arranged to absorb photons, where at least one Bragg mirror (14) is present under the absorption layer (10) arranged to reflect photons that have passed the absorption layer (10) from the opening back to the absorption layer, characterised in that the Bragg mirror (14) is built up from a periodic structure of alternating InP layers and AlInGaAs layers and in that there are at least two Bragg mirrors (14, 15), one lying above the other, in that the Bragg mirrors have different reflectance spectra, and in that the reflectance spectra of the two Bragg mirrors are arranged to give together a broader reflectance spectrum.
Dependencies are inferred from the claim text.