Device-mounted substrate, infrared light sensor and through electrode forming method

A through electrode forming method comprising:

• forming a via hole from a first surface of abase substrate, the via hole having an internal surface in the base substrate;
• forming a thermal oxidation layer on the first surface of the base substrate and the internal surface of the via hole by thermal oxidation;
• forming a device circuit which includes a conductive section above the first surface of the base substrate through the thermal oxidation layer;
• and
• embedding a conductive body in the via hole, after the forming of the device circuit.

An infrared light sensor comprising:

• abase substrate having a first surface and a second surface opposite to each other;
• a via hole formed in the base substrate, the via hole being open at the first and second surfaces, the via hole having an internal surface in the base substrate;
• a first insulating layer including a thermal oxidation layer, the thermal oxidation layer being formed on the first surface and the internal surface;
• a conductive body being disposed in the via hole, the conductive body being surrounded by the first insulating layer;
• a wiring layer being electrically connected to the conductive body, the wiring layer being disposed above the first surface through the first insulating layer;
• and
• an infrared light detection device being electrically connected to the wiring layer, wherein
• a first thickness of the first insulating layer disposed on the first surface and a second thickness of the first insulating layer disposed on the internal surface are the same.

A substrate comprising:

• a base substrate having a first surface and a second surface opposite to each other;
• a conductive body being disposed in the base substrate, the conductive body having a first end located at the first surface and a second end located at the second surface, the conductive body electrically connecting the first end with the second end;
• a thermal oxidation layer being formed on the first surface of the base substrate and being formed between the base substrate and the conductive body;
• and
• a wiring layer being electrically connected to the conductive body, the wiring layer being disposed above the first surface through the thermal oxidation layer, wherein
• a first thickness of the thermal oxidation layer disposed on the first surface and a second thickness of the thermal oxidation layer disposed between the base substrate and the conductive body are the same.

An infrared light sensor comprising:

• abase substrate having a first surface and a second surface opposite to each other;
• a conductive body being disposed in the base substrate, the conductive body having a first end located at the first surface and a second end located at the second surface, the conductive body electrically the first end with the second end;
• a thermal oxidation layer being formed on the first surface of the base substrate and being formed between the base substrate and the conductive body;
• a wiring layer being electrically connected to the conductive body, the wiring layer being disposed above the first surface through the thermal oxidation layer;
• and
• an infrared light detection device being electrically connected to the wiring layer, wherein
• a first thickness of the thermal oxidation layer disposed on the first surface and a second thickness of the thermal oxidation layer disposed between the base substrate and the conductive body are the same.