Method of forming a die having an ic region adjacent a mems region

A method, comprising:

• forming a first epitaxial layer over a substrate, the first layer having a first dopant concentration;
• doping a first portion of the first layer to have a second dopant concentration while shielding a second portion of the first layer from the doping of the first portion;
• forming a second layer overlying the first layer, the second layer having a third dopant concentration;
• doping a third portion of the second layer that overlies the first portion of the first layer to have a fourth dopant concentration while shielding a fourth portion of the second layer from the doping of the third portion;
• forming a suspended electrode of a micro-electromechanical structure in the first and third portions of the first and second layers;
• and
• forming semiconductor transistor components in the fourth portion of the second layer.

A device, comprising:

• a substrate;
• a first dielectric layer on the substrate;
• a first epitaxial layer on the first dielectric layer, the first epitaxial layer having a first portion that has a higher dopant concentration than a second portion;
• a second epitaxial layer on the first epitaxial layer, the second epitaxial layer having a third portion that has a higher dopant concentration than a fourth portion;
• a plurality of suspended electrodes formed with the first and third portions of the first and second epitaxial layers, respectively;
• and
• an integrated circuit formed in the fourth portion of the second epitaxial layer.

A method, comprising:

• forming micro-electromechanical (MEMS) device adjacent to an integrated circuit on a substrate, the forming of the MEMS device and the integrated circuit including:
• forming a first epitaxial layer on the substrate;
• protecting a first portion of the first epitaxial layer;
• doping a second portion of the first epitaxial layer that corresponds to the MEMS device;
• forming a second epitaxial layer on the first epitaxial layer;
• protecting a third portion of the second epitaxial layer;
• doping a fourth portion of the second epitaxial layer that is overlying the second portion of the first epitaxial layer;
• forming a plurality of suspended electrodes in the second and fourth portions of the first and second epitaxial layers, respectively;
• forming an anchor attached to the substrate;
• and
• forming the integrated circuit in the third portion of the second epitaxial layer.