Back to results
US 2012/0235248 A1Published application
Semiconductor device and method for fabricating the same
AssigneeHynix Semiconductor Inc.
InventorHo-Ung KIM
Life of this patent
Estimating the term…
Abstract
A semiconductor device includes a substrate having an active region and an isolation region, a gate pattern crossing both the active region and the isolation region of the substrate, and a protrusion having a surface higher than that of the substrate over at least an edge of the active region contacting a portion of the isolation region under the gate pattern.
Claims11
A semiconductor device, comprising:
- a substrate having an active region and an isolation region;
- a gate pattern crossing both the active region and the isolation region of the substrate;
- and
- a protrusion having a surface higher than that of the substrate over at least an edge of the active region contacting a portion of the isolation region under the gate pattern.
1 more element
-16. (canceled)
Dependencies are inferred from the claim text.