Superior integrity of high-k metal gate stacks by reducing sti divots by depositing a fill material after sti formation
AssigneeGlobalfoundries Inc.
InventorsRohit Pal, Stephan-Detlef Kronholz
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Abstract
When forming sophisticated semiconductor devices on the basis of high-k metal gate electrode structures, which are to be provided in an early manufacturing stage, the encapsulation of the sensitive gate materials may be improved by reducing the depth of or eliminating recessed areas that are obtained after forming sophisticated trench isolation regions. To this end, after completing the STI module, an additional fill material may be provided so as to obtain the desired surface topography and also preserve superior material characteristics of the trench isolation regions.
Claims21
A method, comprising:
- forming a trench isolation region in a semiconductor layer of a semiconductor device, said trench isolation region laterally delineating an active region in said semiconductor layer;
- forming a fill material selectively in a recessed area of said trench isolation region;
- and
- forming a gate electrode structure on said active region and said trench isolation region including said fill material.
A method, comprising:
- forming a trench isolation region in a semiconductor layer of a semiconductor device so as to laterally delineate an active region, said trench isolation region comprising a recessed area adjacent to said active region;
- reducing a depth of said recessed area of said trench isolation region;
- and
- forming a gate electrode structure on said trench isolation region, said gate electrode structure comprising a high-k dielectric material.
A semiconductor device, comprising:
- a trench isolation region laterally delineating an active region in a semiconductor layer, said trench isolation region comprising a first dielectric material and a second dielectric material locally formed adjacent to said active region;
- and
- a gate electrode structure formed on a channel area of said active region, said gate electrode structure comprising a material system comprising a high-k dielectric material and a metal-containing electrode material, said gate electrode structure further comprising a protective liner formed on sidewalls of said high-k dielectric material and said metal-containing electrode material.
Dependencies are inferred from the claim text.