Hybrid mosfet structure having drain side schottky junction
AssigneeInternational Business Machines Corporation
InventorsKangguo Cheng, Ali Khakifirooz, Pranita Kulkarni, Ghavam G. Shahidi
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Abstract
A method of forming a transistor device includes forming a patterned gate structure over a semiconductor substrate, forming a raised source region over the semiconductor substrate adjacent a source side of the gate structure, and forming silicide contacts on the raised source region, on the patterned gate structure, and on the semiconductor substrate adjacent a drain side of the gate structure. Thereby, a hybrid field effect transistor (FET) structure having a drain side Schottky contact and a raised source side ohmic contact is defined.
Claims24
A method of forming a transistor device, the method comprising:
- forming a patterned gate structure over a semiconductor substrate;
- forming a raised source region over the semiconductor substrate adjacent a source side of the gate structure;
- and
- forming suicide contacts on the raised source region, on the patterned gate structure, and on the semiconductor substrate adjacent a drain side of the gate structure, thereby defining a hybrid field effect transistor (FET) structure having a drain side Schottky contact and a raised source side ohmic contact.
A transistor device, comprising:
- a patterned gate structure formed over a semiconductor substrate;
- a raised source region formed over the semiconductor substrate adjacent a source side of the gate structure;
- and
- silicide contacts formed on the raised source region, on the patterned gate structure, and on the semiconductor substrate adjacent a drain side of the gate structure, thereby defining a hybrid field effect transistor (FET) structure having a drain side Schottky contact and a raised source side ohmic contact.
An integrated circuit device, comprising:
- a first transistor and a second transistor formed over a semiconductor substrate, the first transistor comprising a hybrid field effect transistor (FET) structure having a drain side Schottky contact and a raised source side ohmic contact;
- and
- the second transistor having both raised source side and drain side ohmic contacts.
Dependencies are inferred from the claim text.