US 2012/0235238 A1 · FULLY-DEPLETED SON

Abstract

A semiconductor device and a method of fabricating a semiconductor device. The semiconductor device includes a semiconductor substrate, an insulating layer, a first semiconductor layer, a dielectric layer, a second semiconductor layer, a source and drain junction, a gate, and a spacer. The method includes the steps of forming a semiconductor substrate, forming a shallow trench isolation layer, growing a first epitaxial layer, growing a second epitaxial layer, forming a gate, forming a spacer, performing a reactive ion etching, removing a portion of the first epitaxial layer, filling the void with a dielectric, etching back a portion of the dielectric, growing a silicon layer, implanting a source and drain junction, and forming an extension.

Claims24

Dependent claims

A semiconductor device, comprising:

a semiconductor substrate;
an insulating layer on said semiconductor substrate;
a first semiconductor layer disposed on said insulating layer;
a dielectric layer disposed on a portion of said first semiconductor layer;
a second semiconductor layer disposed around said dielectric layer;
a source and drain junction disposed within said second semiconductor layer;
a gate disposed on a portion of said second semiconductor layer;
and
a spacer disposed around said gate and covering a portion of said second semiconductor layer.

6 more elements

Dependencies are inferred from the claim text.

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Abstract

Claims24