Methods for forming barrier regions within regions of insulating material resulting in outgassing paths from the insulating material and related devices
AssigneeGlobalfoundries Inc.
InventorsMan Fai NG, Bin YANG
Life of this patent
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Abstract
Methods and devices are provided for fabricating a semiconductor device having barrier regions within regions of insulating material resulting in outgassing paths from the regions of insulating material. A method comprises forming a barrier region within an insulating material proximate the isolated region of semiconductor material and forming a gate structure overlying the isolated region of semiconductor material. The barrier region is adjacent to the isolated region of semiconductor material, resulting in an outgassing path within the insulating material.
Claims20
A semiconductor device comprising:
- a region of semiconductor material;
- a barrier region adjacent to the region of the semiconductor material;
- a region of insulating material, wherein the barrier region is interposed between the region of semiconductor material and at least a portion of the insulating material, resulting in an outgassing path within the region of insulating material;
- and
- a gate structure overlying the region of semiconductor material, wherein the outgassing path defines a direction for the diffusion of oxygen from the insulating material away from the gate structure.
A semiconductor device comprising:
- a region of semiconductor material;
- a barrier region adjacent to the region of the semiconductor material;
- a region of insulating material, wherein the barrier region is interposed between the region of semiconductor material and at least a portion of the insulating material, resulting in an outgassing path within the region of insulating material;
- and
- a gate structure overlying the region of semiconductor material, wherein the barrier region is interposed between the region of insulating material and the gate structure.
A semiconductor device comprising:
- a region of semiconductor material;
- a barrier region adjacent to the region of the semiconductor material;
- a region of insulating material, wherein the barrier region is interposed between the region of semiconductor material and at least a portion of the insulating material, resulting in an outgassing path within the region of insulating material, and wherein the barrier region is formed in the region of insulating material;
- and
- a gate structure overlying the region of semiconductor material.
Dependencies are inferred from the claim text.