Thin film transistor structure and display device having same

Abstract

A thin film transistor structure includes a substrate, a gate layer, a gate insulator layer, a first semiconductor island, a second semiconductor island and a source and drain layer. The gate layer is disposed on the substrate, and includes a first gate electrode and a second electrode electrically connected to the first gate electrode. The gate insulator layer is disposed on the substrate and covers the first and second gate electrodes. The first semiconductor island is disposed on the gate insulator layer and corresponding to the first gate electrode. The second semiconductor island is disposed on the gate insulator layer and corresponding to the second electrode. The source and drain layer is disposed on the gate insulator layer and next to the first semiconductor island and the second semiconductor island. A display device using the above thin film transistor structure is also provided.

Dependencies are inferred from the claim text.