Field effect transistor structure and method of forming same
AssigneeInternational Business Machines Corporation
InventorsEdward J. Nowak, Richard Q. Williams
Life of this patent
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Abstract
The disclosure relates generally to a metal-oxide-semiconductor field effect transistor (MOSFET) structures and methods of forming the same. The MOSFET structure includes at least one semiconductor body on a substrate; a dielectric cap on a top surface of the at least one semiconductor body, wherein a width of the at least one semiconductor body is less than a width of the dielectric cap; a gate dielectric layer conformally coating the at least one semiconductor body; and at least one electrically conductive gate on the gate dielectric layer.
Claims20
A metal-oxide-semiconductor field effect transistor (MOSFET) structure comprising:
- at least one semiconductor body on a substrate;
- a dielectric cap on a top surface of the at least one semiconductor body, wherein a width of the at least one semiconductor body is less than a width of the dielectric cap;
- a gate dielectric layer conformally coating the at least one semiconductor body;
- and
- at least one electrically conductive gate on the gate dielectric layer.
A method for forming a metal-oxide-semiconductor field effect transistor (MOSFET) structure, the method comprising:
- providing a semiconductor substrate having a dielectric layer thereon;
- forming at least one semiconductor body having a dielectric cap on a top surface of the at least one semiconductor body from the dielectric layer and a semiconductor layer of the semiconductor substrate;
- removing a portion of opposite first and second side walls of the at least semiconductor body resulting in a width of the at least one semiconductor body is less than a width of the dielectric cap;
- forming a gate dielectric layer on the at least one semiconductor body;
- and
- forming at least one electrically conducting gate on the gate dielectric layer.
A method for forming a metal-oxide-semiconductor field effect transistor (MOSFET) structure, the method comprising:
- providing a semiconductor substrate;
- forming a patterned masking layer on the semiconductor substrate;
- etching a semiconductor layer of the semiconductor substrate to form at least one semiconductor body;
- removing the patterned masking layer;
- depositing an oxidation blocking material on the at least one semiconductor body;
- etching back the oxidation blocking material to expose an upper portion of the at least one semiconductor body;
- oxidizing the upper portion of the at least one semiconductor body so as to form a dielectric cap over the upper portion of the at least one semiconductor body, wherein a width of the at least semiconductor body is less than a width of the dielectric cap;
- removing the oxidation blocking material;
- forming a gate dielectric layer on the at least one semiconductor body;
- and
- forming at least one electrically conducting gate on the gate dielectric layer.
Dependencies are inferred from the claim text.