Short Channel Lateral MOSFET

A short channel Lateral MOSFET (LMOS) with interpenetrating drain-body protrusions (IDBP), the short channel LMOS with IDBP comprises:

• a lower device bulk layer of first conductivity type lying in a horizontal plane;
• an upper source region and an upper drain region both of first conductivity type and both located atop said lower device bulk layer;
• said upper source region and upper drain region being in contact with an intervening upper body region of second conductivity type being also located atop said lower device bulk layer;
• said upper drain region and said upper body region are further shaped to form a drain-body interface there between having an IDBP structure along a vertical plane with a surface drain protrusion lying atop a buried body protrusion while revealing a pre-determined top body surface area of the upper body region;
• said upper drain region further comprises a plurality of serially connected drain sub-regions all of a first conductivity type and arranged predominantly along the horizontal direction with:
• a first drain sub-region in contact with the upper body region and shaped, in conjunction with said upper body region, to form the IDBP;
• a last drain sub-region, most distant to the upper body region, shaped to reveal a sufficient top surface area for making electrical contact with an external drain contact electrode;
• and
• each drain sub-region having its own individualized doping concentration level;
• and
• a gate oxide-gate electrode bi-layer disposed atop the upper body region while covering at least its top body surface area thus forming an LMOS with a short channel length defined by the horizontal length of said top body surface area delineated between the upper source region and the upper drain region, said gate oxide-gate electrode bi-layer further extends horizontally overlapping a portion of the upper source region
• whereby, in addition to having a reduced channel-on resistance due to the short channel length, owing to the presence of the IDBP structure causing a correspondingly reduced surface electric field along the channel length the short channel LMOS exhibits a higher drain-source punch-through voltage than an otherwise short channel LMOS without the IDBP.