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US 2012/0235230 A1Published application
Mosfet device with thick trench bottom oxide
AssigneeFairchild Semiconductor Corporation
InventorsChanho Park, Ashok Challa, Ritu Sodhi
Life of this patent
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Abstract
In one general aspect, an apparatus can include a first trench oxide disposed within a first trench of an epitaxial layer and having a trench bottom oxide disposed below a gate portion of the first trench oxide. The apparatus can include a second trench disposed lateral to the first trench. The trench bottom oxide portion of the first oxide can have a thickness greater than a distance within the epitaxial layer from the first trench to the second trench.
Claims22
An apparatus, comprising:
- a first trench within an epitaxial layer;
- a trench oxide disposed within the first trench and having a trench bottom oxide portion disposed below a gate portion of the trench oxide;
- and
- a second trench disposed lateral to the first trench, the trench bottom oxide of the trench oxide having a thickness greater than a distance within the epitaxial layer between the first trench and the second trench.
1 more element
An apparatus, comprising:
- a first trench oxide having a portion disposed below a center portion of a first gate electrode;
- a second trench oxide having a portion disposed below a second gate electrode;
- and
- an epitaxial layer having a portion extending from the first trench oxide to the second trench oxide, the portion of the first trench oxide having a thickness greater than a width of the portion of the epitaxial layer extending from the first trench oxide to the second trench oxide.
1 more element
-21. (canceled)
An apparatus, comprising:
- a first trench including a trench bottom oxide having a portion disposed below a center portion of a gate electrode disposed within the first trench;
- a second trench lined with a trench oxide;
- and
- a mesa disposed between the first trench and the second trench, the trench bottom oxide included in the first trench having a thickness greater than a width of the mesa extending between the first trench to the second trench.
1 more element
Dependencies are inferred from the claim text.