Power Semiconductor Device

A vertical power semiconductor transistor, comprising:

• a semiconductor layer;
• a first terminal at a first side of the semiconductor layer;
• a second terminal at a second side of the semiconductor layer opposite the first side along a first direction;
• a drift zone within the semiconductor layer between the first terminal and the second terminal, the drift zone having, in a central part, a compressive stress of at least 100 MPa along a second direction perpendicular to the first direction, the central part extending from 40% to 60% of an overall extension of the drift zone along the first direction and into a depth of the semiconductor layer of at least 10 μm with respect to at least one of the first side and the second side of the semiconductor layer;
• at least one stressor layer arranged above at least one of the first side and the second side of the semiconductor layer, the at least one stressor layer configured to induce the compressive stress within the drift zone;
• and
• wherein the vertical power semiconductor transistor is configured to be operated at a voltage equal to or larger than 200 V.