Semiconductor device and method of manufacturing the same
AssigneeMacronix International Co., Ltd.
InventorsSheng-Chih LAI, Hang-Ting Lue
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Abstract
A semiconductor device having a non-volatile memory and a method of manufacturing the same are provided. The semiconductor device includes a base material and a stack structure. The stack structure disposed on the base material at least includes a tunneling layer, a trapping layer and a dielectric layer. The trapping layer is disposed on the tunneling layer. The dielectric layer has a dielectric constant and is disposed on the trapping layer. The dielectric layer is transformed from a first solid state to a second solid state when the dielectric layer undergoes a process.
Claims19
A device comprising:
- a base material;
- and
- a stack structure disposed on the base material, the stack structure at least comprising:
- first and second dielectric layers;
- and
- a charge storage layer between the first and second dielectric layers;
- wherein the first dielectric layer has a first state which is transformed from a second state through a process, the first dielectric layer is non-conductive in the first and second states, a threshold-voltage change rate of the device changes from a first rate to a second rate when the first dielectric layer is transformed from the first state to the second state, and the second rate is greater than the first rate.
A device comprising:
- a base material;
- and
- a stack structure disposed on the base material, the stack structure at least comprising:
- first and second dielectric layers;
- and
- a charge storage layer between the first and second dielectric layers;
- wherein the first dielectric layer is a crystalline material.
Dependencies are inferred from the claim text.