Nonvolatile semiconductor memory

A nonvolatile semiconductor memory comprising:

• a first gate insulating film which is formed on a channel region of a semiconductor substrate;
• a charge storage part which is formed on the first gate insulating film;
• a second gate insulating film which is formed on the charge storage part;
• a particle layer which is formed in the second gate insulating film and which includes conductive particles that satisfy Coulomb blockade conditions;
• and
• a gate electrode which is formed on the second gate insulating film.

A method of manufacturing a nonvolatile semiconductor memory, the method comprising:

• forming a first gate insulating film which sandwiches, between oxide films, a first particle layer that includes first conductive particles satisfying Coulomb blockade conditions;
• forming a charge storage part on the first gate insulating film;
• forming, on the charge storage part, a second gate insulating film which sandwiches, between oxide films, a second particle layer that includes second conductive particles differing from the first conductive particles in average particle diameter and satisfying Coulomb blockade conditions;
• forming a gate electrode on the second gate insulating film;
• processing the gate electrode, the second gate insulating layer, the charge storage part, and the first gate insulating layer into a gate pattern;
• and
• doping impurities into the surface of the substrate with the gate pattern as a mask, thereby forming source/drain regions.