Semiconductor device and method for manufacturing same
AssigneeKabushiki Kaisha Toshiba
InventorsMegumi ISHIDUKI, Ryota Katsumata, Tomo Ohsawa, Mitsuru Sato, Masaru Kidoh, Hiroyasu Tanaka
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Abstract
According to one embodiment, a semiconductor device includes a substrate, a first stacked body, a memory film, a first channel body, a second stacked body, a gate insulating film and a second channel body. A step part is formed between a side face of the select gate and the second insulating layer. A film thickness of a portion covering the step part of the second channel body is thicker than a film thickness of a portion provided between the second insulating layers of the second channel body.
Claims18
A semiconductor device comprising:
- a substrate;
- a first stacked body including a plurality of electrode layers and a plurality of first insulating layers alternately stacked on each other on the substrate;
- a memory film provided on a side wall of a first hole formed through the first stacked body in a stacking direction;
- a first channel body provided inside the memory film in the first hole;
- a second stacked body provided on the first stacked body, and including a select gate and a second insulating layer provided on the select gate;
- a gate insulating film provided on a side wall of a second hole which is coupled to the first hole and is formed through the second stacked body in a stacking direction;
- and
- a second channel body provided inside the gate insulating film in the second hole and connected with the first channel body,
- a step part being formed between a side face of the select gate and the second insulating layer;
- and
- a film thickness of a portion covering the step part of the second channel body being thicker than a film thickness of a portion provided between the second insulating layers of the second channel body.
A method for manufacturing a semiconductor device, comprising:
- forming a first stacked body on a substrate, the first stacked body including a plurality of electrode layers and a plurality of first insulating layers alternately stacked on each other;
- forming a select gate on the first stacked body and a second insulating layer on the select gate to form a second stacked body;
- forming a first hole through the first stacked body in a stacking direction, and a second hole coupled to the first hole and through the second stacked body in a stacking direction;
- rendering a hole diameter of the second hole between the second insulating layers to be wider than a hole diameter of the second hole between the select gates to form a step part between a side face of the select gate and the second insulating layer;
- forming a memory film on a side wall of the first hole;
- forming a gate insulating film on a side wall of the second hole;
- forming a first channel body inside the memory film;
- forming a second channel body inside the gate insulating film, the second channel body being connected to the first channel body;
- implanting an impurity into a portion covering the step part of the second channel body by ion implant;
- expanding a volume of the portion covering the step part and implanted the impurity of the second channel body by a heat treatment;
- and
- forming a semiconductor containing an impurity inside the second channel body above a portion where the second channel body is volume-expanded.
Dependencies are inferred from the claim text.