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AssigneeInternational Business Machines Corporation
InventorsBrent A. ANDERSON, Andres Bryant, William F. Clark, JR., John J. Ellis-Monaghan, Edward J. Nowak
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Semiconductor structures with damascene metal gates and pixel sensor cell shields, methods of manufacture and design structures are provided. The method includes forming a dielectric layer over a dummy gate structure. The method further includes forming one or more recesses in the dielectric layer. The method further includes removing the dummy gate structure in the dielectric layer to form a trench. The method further includes forming metal in the trench and the one more recesses in the dielectric layer to form a damascene metal gate structure in the trench and one or more metal components in the one or more recesses.
A method comprising:
A structure comprising a damascene metal gate and metal shield for pixel sensor cells in a same dielectric layer, above a sensitive component of a pixel sensor cell, wherein the metal shield for pixel sensor cells are formed in shallow recesses in the dielectric layer and the damascene metal gate is formed in a trench extending to an underlying substrate formed under the dielectric layer.
A hardware description language (HDL) design structure encoded on a machine-readable data storage medium, the HDL design structure comprising elements that when processed in a computer-aided design system generates a machine-executable representation of a damascene metal gate and metal shield structure on a same device level, wherein the HDL design structure comprises a damascene metal gate and metal shield for pixel sensor cells in a same dielectric layer, above a sensitive component of a pixel sensor cell, wherein the metal shield for pixel sensor cells are formed in shallow recesses in the dielectric layer and the damascene metal gate is formed in a deeper trench extending to an underlying substrate formed under the dielectric layer.
Dependencies are inferred from the claim text.