Back to results
US 2012/0235210 A1Published application
Semiconductor device, manufacturing method and transistor circuit
AssigneeFujitsu Semiconductor Limited
InventorsYoshihiro TAKEMAE, Tsutomu Hosoda, Toshiya Sato
Life of this patent
Estimating the term…
Abstract
A transistor circuit includes a first high electron mobility transistor and a second high electron mobility transistor having a negative threshold voltage, wherein a source of the second high electron mobility transistor is coupled to a gate of the first high electron mobility transistor, and a gate of the second high electron mobility transistor is coupled to a source of the first high electron mobility transistor.
Claims15
A transistor circuit comprising:
- a first high electron mobility transistor;
- and
- a second high electron mobility transistor having a negative threshold voltage,
- wherein a source of the second high electron mobility transistor is coupled to a gate of the first high electron mobility transistor, and
- a gate of the second high electron mobility transistor is coupled to a source of the first high electron mobility transistor.
2 more elements
A semiconductor device comprising:
- a first compound semiconductor film;
- a laminated film in which a second compound semiconductor film and an insulating film are laminated and
- an electrode including a first portion embedded in a recess formed on the laminated film and a second portion extending on both the first portion and the insulating film,
- wherein the first portion includes a first embedded portion including a first length in an extending direction of the second portion and a second embedded portion disposed between the first embedded portion and a bottom of the recess with a second length smaller than the first length.
1 more element
A semiconductor device manufacturing method comprising:
- forming a first compound semiconductor film;
- forming a second compound semiconductor film on the first compound semiconductor film;
- forming a first recess region having a first width on the second compound semiconductor film;
- forming an insulating film on the second compound semiconductor on which the first recess region is formed;
- forming a second recess region having a second width greater than the first width on the insulating film so that the first recess region and both sides of the first recess region are exposed;
- and
- forming electrodes extending above the first recess region and the second recess region, and on the insulating film outside the second recess region.
4 more elements
Dependencies are inferred from the claim text.