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AssigneeKabushiki Kaisha Toshiba
InventorTomomichi Naka
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According to one embodiment, a semiconductor light emitting device wafer includes a plurality of semiconductor light emitting devices, the plurality of semiconductor light emitting devices being collectively formed, and includes a light emitting unit and a wavelength conversion unit. The light emitting unit has a first major surface and a second major surface on a side opposite to the first major surface. The wavelength conversion unit is provided on the first major surface side. The wavelength conversion unit contains a fluorescer. A thickness of the wavelength conversion unit changes based on a distribution in a surface of the wafer of at least one selected from a wavelength and an intensity of light emitted from the light emitting unit of the plurality of semiconductor light emitting devices.
A semiconductor light emitting device wafer including a plurality of semiconductor light emitting devices, the plurality of semiconductor light emitting devices being collectively formed, the wafer comprising:
A method for manufacturing a semiconductor light emitting device including collectively forming a plurality of semiconductor light emitting devices on a wafer, the method comprising:
Dependencies are inferred from the claim text.