Semiconductor light emitting device

A semiconductor light emitting device comprising:

• a stacked structure body including a first conductivity type first semiconductor layer, a second conductivity type second semiconductor layer facing a part of the first semiconductor layer, and a light emitting layer provided between the second semiconductor layer and the part of the first semiconductor layer, and having a first major surface on a side of the first semiconductor layer and a second major surface on a side of the second semiconductor layer;
• a first electrode having a first contact part coming into contact with the first semiconductor layer on a side of the second major surface;
• and
• a second electrode having a part coming into contact with the second semiconductor layer on the second major surface,
• the first major surface having a first part and a second part, the first part having a part overlapping a contact surface with the first semiconductor layer in the first contact part when viewed in a stacking direction from the first semiconductor layer toward the second semiconductor layer, the second part having a part overlapping the second semiconductor layer when viewed in the stacking direction,
• the second part having irregularity, the pitch of the irregularity being longer than a peak wavelength of emission light emitted from the light emitting layer, and
• the first part having smaller irregularity than the second part.