Semiconductor device and method for manufacturing same

A semiconductor device comprising:

• a substrate made of silicon carbide and having a main surface having an off angle of not less than −3° and not more than +5° relative to a (0-33-8) plane in a <01-10> direction;
• a semiconductor layer made of silicon carbide and formed on said main surface of said substrate by means of epitaxial growth;
• and
• an insulating film formed in contact with a surface of said semiconductor layer,
• a maximum value of hydrogen atom concentration being 1×1021 cm−3 or greater in a region within 10 nm from an interface between said semiconductor layer and said insulating film,
• said semiconductor layer being made of silicon carbide of 4H type, and
• when photoluminescence measurement is performed for said semiconductor layer, a ratio of strength of a peak appearing in a wavelength of around 500 nm to strength of a peak appearing in a wavelength of around 390 nm being 0.1 or smaller.

A semiconductor device comprising:

• a substrate made of silicon carbide and having a main surface having an off angle of not less than −3° and not more than +5° relative to a (0-33-8) plane in a <01-10> direction;
• a semiconductor layer made of silicon carbide and formed on said main surface of said substrate by means of epitaxial growth;
• and
• an insulating film formed in contact with a surface of said semiconductor layer,
• a maximum value of total concentration of nitrogen atoms and hydrogen atoms being 1×1021 cm−3 or greater in a region within 10 nm from an interface between said semiconductor layer and said insulating film,
• said semiconductor layer being made of silicon carbide of 4H type, and
• when photoluminescence measurement is performed for said semiconductor layer, a ratio of strength of a peak appearing in a wavelength of around 500 nm to strength of a peak appearing in a wavelength of around 390 nm being 0.1 or smaller.

A method for manufacturing a semiconductor device comprising the steps of:

• preparing a substrate made of silicon carbide and having a main surface having an off angle of not less than −3° and not more than +5° relative to a (0-33-8) plane in a <01-10> direction;
• forming a semiconductor layer on said main surface of said substrate by means of epitaxial growth;
• forming an insulating film in contact with a surface of said semiconductor layer;
• and
• adjusting nitrogen atom concentration such that a maximum value of the nitrogen atom concentration becomes 1×1021 cm−3 or greater in a region within 10 nm from an interface between said semiconductor layer and said insulating film
• the step of preparing said substrate including the steps of
• obtaining said substrate from a source material crystal made of silicon carbide of 4H type, and
• removing a processing damage layer formed in a region including the other main surface of said substrate thus obtained, the other main surface being opposite to said main surface of said substrate.

A method for manufacturing a semiconductor device comprising the steps of:

• preparing a substrate made of silicon carbide and having a main surface having an off angle of not less than −3° and not more than +5° relative to a (0-33-8) plane in a <01-10> direction;
• forming a semiconductor layer on said main surface of said substrate by means of epitaxial growth;
• forming an insulating film in contact with a surface of said semiconductor layer;
• and
• adjusting hydrogen atom concentration such that a maximum value of the hydrogen atom concentration becomes 1×1021 cm−3 or greater in a region within 10 nm from an interface between said semiconductor layer and said insulating film,
• the step of preparing said substrate including the steps of
• obtaining said substrate from a source material crystal made of silicon carbide of 4H type, and
• removing a processing damage layer formed in a region including the other main surface of said substrate thus obtained, the other main surface being opposite to said main surface of said substrate.

A method for manufacturing a semiconductor device comprising the steps of:

• preparing a substrate made of silicon carbide and having a main surface having an off angle of not less than −3° and not more than +5° relative to a (0-33-8) plane in a <01-10> direction;
• forming a semiconductor layer on said main surface of said substrate by means of epitaxial growth;
• forming an insulating film in contact with a surface of said semiconductor layer;
• and
• adjusting total concentration of nitrogen atoms and hydrogen atoms such that a maximum value of said total concentration becomes 1×1021 cm−3 or greater in a region within 10 nm from an interface between said semiconductor layer and said insulating film,
• the step of preparing said substrate including the steps of
• obtaining said substrate from a source material crystal made of silicon carbide of 4H type, and
• removing a processing damage layer formed in a region including the other main surface of said substrate thus obtained, the other main surface being opposite to said main surface of said substrate.