Normally-Off Semiconductor Devices
AssigneeCree, Inc.
InventorsSten Heikman, Yifeng Wu
Life of this patent
Estimating the term…
Abstract
Normally-off semiconductor devices are provided. A Group III-nitride buffer layer is provided. A Group III-nitride barrier layer is provided on the Group III-nitride buffer layer. A non-conducting spacer layer is provided on the Group III-nitride barrier layer. The Group III-nitride barrier layer and the spacer layer are etched to form a trench. The trench extends through the barrier layer and exposes a portion of the buffer layer. A dielectric layer is formed on the spacer layer and in the trench and a gate electrode is formed on the dielectric layer. Related methods of forming semiconductor devices are also provided herein.
Claims30
A transistor, comprising:
- a Group III-nitride buffer layer;
- a Group III-nitride barrier layer on the Group III-nitride buffer layer;
- a non-conducting spacer layer on the Group III-nitride barrier layer, the Group III-nitride barrier layer and the spacer layer including a trench;
- a conformal dielectric layer on the spacer layer and the barrier layer and in the trench;
- a gate electrode on the dielectric layer.
A transistor, comprising:
- a Group III-nitride barrier layer;
- a non-conducting spacer layer on the Group III-nitride barrier layer;
- a gate electrode on the spacer layer.
A normally-off Group III nitride transistor exhibiting substantially no mobile charge in a channel under a gate electrode at zero bias.
Dependencies are inferred from the claim text.