Light emitting diode and method for manufacturing the same
AssigneeAdvanced Optoelectronic Technology, Inc.
InventorsTZU-CHIEN HUNG, CHIA-HUI SHEN
Life of this patent
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Abstract
An LED includes a substrate, a first n-type GaN layer, a connecting layer, a second n-type GaN layer, a light emitting layer, and a p-type GaN layer formed on the substrate in sequence, the connecting layer being etchable by alkaline solution, a bottom surface of the second n-type GaN layer facing towards the connecting layer having a roughened exposed portion, the GaN on the bottom surface of the second n-type GaN layer having an N-face polarity, a blind hole extending through the p-type GaN layer, the light emitting layer and the second n-type GaN layer to expose the connecting layer, and an annular rough portion formed on the bottom surface of the second n-type GaN layer and surrounding each blind hole.
Claims20
An LED comprising:
- a substrate;
- a first n-type GaN layer, a connecting layer, a second n-type GaN layer, a light emitting layer, and a p-type GaN layer formed on the substrate in sequence, a top surface of the second n-type GaN layer away from the connecting layer comprising a first area and a second area, the light emitting layer, and the p-type GaN layer formed on the first area of the top surface of the second n-type GaN layer in sequence, the connecting layer being etchable by alkaline solution, an outer edge of a bottom surface of the second n-type GaN layer which connects the connecting layer having a roughened exposed portion, the GaN on the bottom surface of the second n-type GaN layer having an N-face polarity;
- a blind hole extending through the p-type GaN layer, the light emitting layer and the second n-type GaN layer to reach the connecting layer and expose the connecting layer;
- and
- an annular rough portion formed on the bottom surface of the second n-type GaN layer and surrounding the blind hole.
A method for manufacturing an LED comprising:
- providing a substrate;
- forming a first n-type GaN layer, a connecting layer, a second n-type GaN layer, a light emitting layer, and a p-type GaN layer on the substrate in sequence, the GaN on a bottom surface of the second n-type GaN layer facing towards the connecting layer being N-face GaN;
- forming a plurality of blind holes extending through the p-type GaN layer, the light emitting layer and the second n-type GaN layer to expose the connecting layer;
- and
- etching the connecting layer by alkaline solution to expose a portion of the bottom surface of the second n-type GaN layer, and correspondingly roughening the exposed portion of the bottom surface of the second n-type GaN layer during the etching.
A method for manufacturing an LED comprising:
- providing a substrate;
- forming a first n-type GaN layer, a connecting layer, a second n-type GaN layer, a light emitting layer, and a p-type GaN layer on the substrate in sequence, the first n-type GaN layer, the connecting layer, the second n-type GaN layer, the light emitting layer, and the p-type GaN layer cooperatively forming a semiconductor layer, the connecting layer being etchable by alkaline solution, the GaN on a bottom surface of the second n-type GaN layer facing towards the connecting layer being N-face GaN;
- forming a plurality of cutting channels on the semiconductor layer to divide the semiconductor layer into a plurality of light emitting units, the cutting channel running through the p-type GaN layer, the light emitting layer, and the second n-type GaN layer to expose a portion of the connecting layer;
- forming a plurality of blind holes extending through the p-type GaN layer, the light emitting layer and the second n-type GaN layer to expose the connecting layer;
- etching away a portion of the connecting layer exposed by the blind holes by using alkaline solution to expose a portion of the bottom surface of the second n-type GaN layer, and etching the exposed portion of the bottom surface of the second n-type GaN layer by using the alkaline solution to roughen the exposed portion of the bottom surface of the second n-type GaN layer;
- and
- cutting along the cutting channels to form a plurality of LEDs.
Dependencies are inferred from the claim text.