Semiconductor Device
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorTatsuya Arao
Life of this patent
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Abstract
To realize a semiconductor device including a capacitor element capable of obtaining a sufficient capacitor without reducing an opening ratio, in which a pixel electrode is flattened in order to control a defect in orientation of liquid crystal. A semiconductor device of the present invention includes a light-shielding film formed on the thin film transistor, a capacitor insulating film formed on the light-shielding film, a conductive layer formed on the capacitor insulating film, and a pixel electrode that is formed so as to be electrically connected to the conductive layer, in which a storage capacitor element comprises the light-shielding film, the capacitor insulating film, and the conductive layer, whereby an area of a region serving as the capacitor element can be increased.
Claims41
1-35. (canceled)
A semiconductor device comprising:
- a substrate having a pixel portion and a driver circuit portion;
- a first conductive layer over the substrate;
- a first insulating film over the first conductive layer;
- a thin film transistor over the first insulating film and the first conductive layer;
- source and drain wirings electrically connected to the thin film transistor;
- a second insulating film over the thin film transistor, the second insulating film having a planarized surface;
- a second conductive layer over the second insulating film;
- a third insulating film over the second conductive layer;
- a pixel electrode over the second conductive layer with the third insulating film interposed therebetween, the pixel electrode electrically connected to the thin film transistor,
- wherein at least a channel region of the thin film transistor is overlapped with the first conductive layer.
A semiconductor device comprising:
- a substrate having a pixel portion and a driver circuit portion;
- a first conductive layer over the substrate;
- a first insulating film over the first conductive layer;
- a thin film transistor over the first insulating film and the first conductive layer;
- source and drain wirings electrically connected to the thin film transistor;
- a second insulating film over the thin film transistor, the second insulating film having a planarized surface;
- a second conductive layer over the second insulating film;
- a third insulating film over the second conductive layer;
- a pixel electrode over the second conductive layer with the third insulating film interposed therebetween, the pixel electrode electrically connected to the thin film transistor,
- wherein at least a channel region of the thin film transistor is overlapped with the first conductive layer, and
- wherein an end portion of the pixel electrode is overlapped with the second conductive layer.
A semiconductor device comprising:
- a substrate having a pixel portion and a driver circuit portion;
- a first conductive layer over the substrate;
- a first insulating film over the first conductive layer;
- a thin film transistor over the first insulating film and the first conductive layer, the thin film transistor comprising a semiconductor layer and a gate electrode with a gate insulating film interposed therebetween;
- source and drain wirings electrically connected to the thin film transistor;
- a second insulating film over the thin film transistor, the second insulating film having a planarized surface;
- a second conductive layer over the second insulating film;
- a third insulating film over the second conductive layer;
- a pixel electrode over the second conductive layer with the third insulating film interposed therebetween, the pixel electrode electrically connected to the thin film transistor,
- wherein at least a channel region of the thin film transistor is overlapped with the first conductive layer, and
- wherein the gate electrode of the thin film transistor comprising molybdenum.
A semiconductor device comprising:
- a substrate having a pixel portion and a driver circuit portion;
- a first conductive layer over the substrate;
- a first insulating film over the first conductive layer;
- a thin film transistor over the first insulating film and the first conductive layer, the thin film transistor comprising a semiconductor layer and a gate electrode with a gate insulating film interposed therebetween;
- source and drain wirings electrically connected to the thin film transistor;
- a second insulating film over the thin film transistor, the second insulating film having a planarized surface;
- a second conductive layer over the second insulating film;
- a third insulating film over the second conductive layer;
- a pixel electrode over the second conductive layer with the third insulating film interposed therebetween, the pixel electrode electrically connected to the thin film transistor,
- wherein at least a channel region of the thin film transistor is overlapped with the first conductive layer,
- wherein the gate electrode of the thin film transistor comprising molybdenum, and
- wherein an end portion of the pixel electrode is overlapped with the second conductive layer.
Dependencies are inferred from the claim text.