Active matrix substrate, production method, and display device
AssigneeSharp Kabushiki Kaisha
InventorHisao Ochi
Life of this patent
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Abstract
Disclosed is an active matrix substrate (5) on which pixels, each having a thin film transistor (18) and a pixel electrode (19) connected to the thin film transistor (18), are disposed in a matrix, and that includes a base material (5a) on which the pixels in a matrix are formed. In a contact hole portion (H), by anodically oxidizing a three-layered metal film (metal film) (21), an anodic oxidation film (29) is formed on the three-layered metal film (21) so as to fill a contact hole of a protective layer (27), with an end portion of the anodic oxidation film (29) being placed under an insulating layer (28). In the contact hole portion (H), the pixel electrode (19) and the three-layered metal film (21) are connected to each other via the anodic oxidation film (29).
Claims9
An active matrix substrate on which pixels, each having a thin film transistor and a pixel electrode connected to the thin film transistor, are disposed in a matrix, and that includes a base material on which the pixels in a matrix are formed,
- wherein, on the base material, a metal film connecting a drain electrode of the thin film transistor and the pixel electrode, a protective layer formed so as to cover the metal film, and a insulating layer formed on the protective layer are disposed,
- in each of the protective layer and the insulating layer, a contact hole of a contact hole portion connecting the pixel electrode and the metal film is provided,
- in the contact hole portion, an anodic oxidation film is formed on the metal film by anodically oxidizing the metal film so as to fill the contact hole of the protective layer with an end portion of the anodic oxidation film being placed under the insulating layer, and
- in the contact hole portion, the pixel electrode and the metal film are connected to each other via the anodic oxidation film.
A method for producing an active matrix substrate on which pixels, each having a thin film transistor and a pixel electrode connected to the thin film transistor, are disposed in a matrix, and that includes a base material on which the pixels in a matrix are formed, comprising:
- a metal film forming process in which a metal film connecting a drain electrode of the thin film transistor and the pixel electrode is formed on the base material;
- a protective layer forming process in which a protective layer is formed so as to cover the metal film;
- an insulating layer forming process in which an insulating layer is formed on the protective layer so as to be provided with a contact hole of a contact hole portion connecting the pixel electrode and the metal film;
- a contact hole forming process in which a contact hole of the contact hole portion is formed in the protective layer using the insulating layer as a mask;
- an anodic oxidation film forming process in which an anodic oxidation film is formed on the metal film so as to fill the contact hole of the protective layer with an end portion of the anodic oxidation film being placed under the insulating layer, by anodically oxidizing the metal film that is exposed in the contact hole formed in the protective layer;
- and
- a connecting process in which the pixel electrode and the metal film are connected to each other via the anodic oxidation film in the contact hole portion.
Dependencies are inferred from the claim text.