US 2012/0235115 A1 · GROWTH OF III-V LED STACKS USING NANO MASKS

Abstract

Methods, semiconductor material stacks and equipment for manufacture of light emitting diodes (LEDs) with improve crystal quality. A growth stopper is deposited between nuclei for a group III-V material, such as GaN, to form a nano mask. The group III-V material is laterally overgrown from a region of the nuclei not covered by the nano mask to form a continuous material layer with reduced dislocation density in preparation for subsequent growth of n-type and p-type layers of the LED. The lateral overgrowth from the nuclei may further recover the surface morphology of the buffer layer despite the presence of the nano mask. Presence of the growth stopper may further result in void formation on a substrate side of an LED stack to improve light extraction efficiency.

Claims20

Dependent claims

A method for epitaxially growing a semiconductor stack on a substrate, comprising:

providing a substrate in a deposition chamber;
forming a buffer layer over the substrate;
epitaxially growing islands of a group III-nitride material over the buffer layer to form nuclei;
depositing a growth stopper between the nuclei;
epitaxially overgrowing the group III-nitride material laterally from an upper region of the nuclei, the upper region left uncovered by the growth stopper to bridge the nuclei above the growth stopper.

2 more elements

Dependencies are inferred from the claim text.

Growth of iii-v led stacks using nano masks

Life of this patent

Growth of iii-v led stacks using nano masks

Life of this patent

Abstract

Claims20