Non-volatile semiconductor storage device and manufacturing method of non-volatile semiconductor storage device
AssigneeKabushiki Kaisha Toshiba
InventorYasuhiro Nojiri
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Abstract
According to one embodiment, a memory cell includes a resistance change layer, an upper electrode layer, a lower electrode layer, a diode layer, a first oxide film, and a second oxide film. The upper electrode layer is arranged above the resistance change layer. The lower electrode layer is arranged below the resistance change layer. The diode layer is arranged above the upper electrode layer or below the lower electrode layer. The first oxide film exists on a side wall of at least one electrode layer of the upper electrode layer or the lower electrode layer. The second oxide film exists on a side wall of the diode layer. The film thickness of the first oxide film is thicker than a film thickness of the second oxide film.
Claims20
A non-volatile semiconductor storage device comprising:
- a first line;
- a second line that intersects the first line;
- and
- a memory cell arranged at a position where the first line and the second line intersect, wherein
- the memory cell includes
- a resistance change layer,
- an upper electrode layer arranged above the resistance change layer,
- a lower electrode layer arranged below the resistance change layer,
- a diode layer arranged above the upper electrode layer or below the lower electrode layer,
- a first oxide film existing on a side wall of at least one electrode layer of the upper electrode layer or the lower electrode layer, and
- a second oxide film existing on a side wall of the diode layer;
- and
- a film thickness of the first oxide film is thicker than a film thickness of the second oxide film.
A manufacturing method of a non-volatile semiconductor storage device including a first line, a second line, and a memory cell, the second line intersecting the first line, the memory cell being arranged at a position where the first line and the second line intersect on a semiconductor substrate, the memory cell including a diode layer, a lower electrode layer, a resistance change layer, and an upper electrode layer, the method comprising forming the memory cell, wherein
- the forming the memory cell includes
- forming a layer to become either electrode layer of the lower electrode layer or the upper electrode layer,
- forming a stacked film including a layer to become the diode layer, on the layer to become the electrode layer,
- forming a stacked structure in which a side wall is exposed by processing the stacked film,
- forming a protective film to cover the side wall of the stacked structure,
- forming an electrode layer in which a side wall is exposed by processing the layer to become the electrode layer, in a state where the side wall of the stacked structure is covered with the protective film, and
- oxidizing the side wall of the electrode layer in which the side wall is exposed, in a state where the side wall of the stacked structure is covered with the protective film.
A manufacturing method of a non-volatile semiconductor storage device including a first line, a second line, and a memory cell, the second line intersecting the first line, the memory cell being arranged at a position where the first line and the second line intersect on a semiconductor substrate, the memory cell including a diode layer, a lower electrode layer, a resistance change layer, and an upper electrode layer, the method comprising forming the memory cell, wherein
- the forming the memory cell includes
- forming a layer to become the diode layer,
- forming a layer to become either electrode layer of the lower electrode layer or the upper electrode layer on an upper side of the layer to become the diode layer,
- forming a stacked film above the layer to become the electrode layer,
- forming a stacked structure in which a side wall is exposed by processing the stacked film,
- forming a protective film to cover the side wall of the stacked structure,
- forming an electrode layer in which a side wall is exposed by processing the layer to become the electrode layer, in a state where the side wall of the stacked structure is covered with the protective film,
- oxidizing the side wall of the electrode layer in which the side wall is exposed, in a state where the side wall of the stacked structure is covered with the protective film,
- forming the diode layer in which a side wall is exposed by processing the layer to become the diode layer, in a state where the side wall of the stacked structure is covered with the protective film, and
- forming a second protective film to cover the side wall of the diode layer.
Dependencies are inferred from the claim text.