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US 2012/0235108 A1Published application
Method of forming memory cell using gas cluster ion beams
AssigneeMicron Technology, Inc.
InventorJohn Smythe
Life of this patent
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Abstract
A variable resistance memory cell structure and a method of forming it. The method includes forming a first electrode, forming an insulating material over the first electrode, forming a via in the insulating material to expose a surface of the first electrode, forming a heater material within the via using gas cluster ion beams, forming a variable resistance material within the via, and forming a second electrode such that the heater material and variable resistance material are provided between the first and second electrodes.
Claims23
1-31. (canceled)
A memory cell, comprising:
- a first electrode;
- an insulating material on the first electrode;
- a via in the insulating material exposing a surface of the first electrode;
- a gas cluster ion beam formed heater material within the via;
- a variable resistance material within the via;
- and
- a second electrode on the variable resistance material and heater material.
4 more elements
A memory cell, comprising:
- a first electrode;
- a gas cluster ion beam formed heater material on the first electrode;
- an insulating material on the heater material;
- a via in the insulating material to expose a surface of the heater material;
- a variable resistance material within the via;
- and
- a second electrode on the variable resistance material and the insulating material.
4 more elements
Dependencies are inferred from the claim text.