Nonvolatile memory device

A nonvolatile memory device, comprising:

• a word line interconnect layer including a plurality of word lines extending in a first direction;
• a bit line interconnect layer including a plurality of bit lines extending in a second direction that intersects the first direction;
• a pillar disposed between each of the word lines and each of the bit lines;
• and
• charge bearing members containing a positive fixed charge, and provided on side faces of the pillars, the pillars including:
• a diode film provided with a p-type layer and an n-type layer;
• and
• a variable resistance film stacked on the diode film, and
• the charge bearing member being disposed on side faces of the n-type layer, and being not disposed on side faces of the p-type layer.

A nonvolatile memory device, comprising:

• a word line interconnect layer including a plurality of word lines extending in a first direction;
• a bit line interconnect layer including a plurality of bit lines extending in a second direction that intersects the first direction;
• a pillar disposed between each of the word lines and each of the bit lines;
• negative charge bearing members containing a negative fixed charge, and provided on side faces of the pillars;
• and
• positive charge bearing members containing a positive fixed charge, and provided on the side faces of the pillars, the pillars including:
• a diode film provided with a p-type layer and an n-type layer;
• and
• a variable resistance film stacked on the diode film, and
• the negative charge bearing member being disposed on side faces of the p-type layer, and being not disposed on side faces of the n-type layer, and
• the positive charge bearing member being disposed on the side faces of the n-type layer, and being not disposed on the side faces of the p-type layer.