Apparatus and method for forming a solid immersion lens using a binary bitmap milling pattern
AssigneeAvago Technologies Enterprise IP (Singapore) Pte. Ltd.
InventorsDavid Winslow Niles, Ronald William Kee
Life of this patent
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Abstract
A method for forming a solid immersion lens (SIL) includes generating a focused ion beam, and projecting the focused ion beam onto an optical medium at locations defined by a binary bitmap milling pattern, wherein the locations at which the focused ion beam impact a surface of the optical medium are randomized over successive raster scans of the surface of the optical medium to form at least a portion of a hemispherical structure in the optical medium.
Claims16
An apparatus for forming a solid immersion lens (SIL) in an optical medium, comprising:
- a milling head configured to generate a focused ion beam;
- and
- a binary bitmap milling pattern defining locations at which the focused ion beam is projected onto a surface of the optical medium, wherein the locations at which the focused ion beam impact the surface of the optical medium are randomized over successive raster scans of the surface of the optical medium.
A method for forming a solid immersion lens (SIL), comprising:
- generating a focused ion beam;
- and
- projecting the focused ion beam onto an optical medium at locations defined by a binary bitmap milling pattern, wherein the locations at which the focused ion beam impact a surface of the optical medium are randomized over successive raster scans of the surface of the optical medium to form at least a portion of a hemispherical structure in the optical medium.
An apparatus for forming a solid immersion lens (SIL) in bulk silicon, comprising:
- a milling head configured to generate a focused ion beam;
- and
- a binary bitmap milling pattern defining locations at which the focused ion beam is projected onto a surface of the bulk silicon, wherein the locations at which the focused ion beam impact the surface of the bulk silicon are randomized over successive raster scans of the surface of the bulk silicon by relative rotation between the rastering axes of the focused ion beam and the surface of the bulk silicon.
Dependencies are inferred from the claim text.