Photoconductive element
AssigneeCanon Kabushiki Kaisha
InventorsToshihiko Ouchi, Kousuke Kajiki
Life of this patent
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Abstract
Provided is a photoconductive element which solves a problem inherent in an element for generating/detecting a terahertz wave by photoexcitation that terahertz wave generation efficiency is limited by distortions and defects of a low temperature grown semiconductor. The photoconductive element includes: a semiconductor substrate; a semiconductor low temperature growth layer; and a semiconductor layer, which is positioned between the semiconductor low temperature growth layer and the semiconductor substrate and is thinner than the semiconductor low temperature growth layer, in which the semiconductor low temperature growth layer includes a semiconductor which lattice-matches with the semiconductor layer and does not lattice-match with the semiconductor substrate.
Claims12
A photoconductive element, comprising:
- a semiconductor substrate;
- a semiconductor low temperature growth layer;
- electrodes;
- and
- a semiconductor layer, which is positioned between the semiconductor low temperature growth layer and the semiconductor substrate and which is thinner than the semiconductor low temperature growth layer,
- wherein the semiconductor low temperature growth layer includes a semiconductor which lattice-matches with the semiconductor layer and does not lattice-match with the semiconductor substrate.
A photoconductive element, comprising:
- a semiconductor substrate;
- a semiconductor low temperature growth layer;
- electrodes;
- and
- a semiconductor layer, which is positioned between the semiconductor low temperature growth layer and the semiconductor substrate and which is thinner than the semiconductor low temperature growth layer,
- wherein the semiconductor layer includes at least a first semiconductor region and a second semiconductor region,
- wherein the first semiconductor region includes a semiconductor which lattice-matches with the semiconductor low temperature growth layer, and
- wherein the second semiconductor region includes a semiconductor which lattice-matches with the semiconductor substrate.
A method of manufacturing a photoconductive element including a semiconductor low temperature growth layer,
- the method comprising:
- forming a semiconductor layer on a semiconductor substrate at 400° C. or more and 700° C. or less;
- and
- forming the semiconductor low temperature growth layer on the semiconductor layer at 200° C. or more and less than 400° C., the semiconductor low temperature growth layer including a semiconductor which lattice-matches with the semiconductor layer and does not lattice-match with the semiconductor substrate.
A method of manufacturing a photoconductive element including a semiconductor low temperature growth layer,
- the method comprising:
- forming, on a semiconductor substrate, a second semiconductor region including a semiconductor, which lattice-matches with the semiconductor substrate, at 400° C. or more and 700° C. or less, and forming a first semiconductor region on the second semiconductor region;
- and
- forming the semiconductor low temperature growth layer on the first semiconductor layer at 200° C. or more and less than 400° C., the semiconductor low temperature growth layer including a semiconductor which lattice-matches with the first semiconductor region.
Dependencies are inferred from the claim text.