Solid-state imaging device, drive method of solid-state imaging device, and imaging apparatus
AssigneeSony Corporation
InventorFumihiko KOGA
Life of this patent
Estimating the term…
Abstract
A solid-state imaging device that includes: a pixel array section configured by an array of a unit pixel, including an optoelectronic conversion section that subjects an incoming light to optoelectronic conversion and stores therein a signal charge, a transfer transistor that transfers the signal charge stored in the optoelectronic conversion section, a charge-voltage conversion section that converts the signal charge provided by the transfer transistor into a signal voltage, and a reset transistor that resets a potential of the charge-voltage conversion section; and voltage setting means for setting a voltage of a well of the charge-voltage conversion section to be negative.
Claims23
-13. (canceled)
A solid-state imaging device comprising:
- a pixel section including an array of a plurality of unit pixels each formed in one or more well regions on a substrate, each unit pixel having one or more photodiode regions, a first transistor which reads charge to a node and second transistor which resets the node;
- wherein a well region input voltage is applied from a voltage source when the second transistor resets the node.
The solid-state imaging device according to the claim 1, wherein the voltage is negative voltage.
The solid-state imaging device according to the claim 1, wherein at least one of the first and second transistors is a depletion type transistor.
The solid-state imaging device according to the claim 1, wherein the first transistor is a transfer transistor.
The solid-state imaging device according to the claim 1, wherein the second transistor is a reset transistor.
The solid-state imaging device according to the claim 1, wherein the second transistor resets a potential of the charge-voltage conversion section.
The solid-state imaging device according to the claim 1, wherein the voltage setting means sets the voltage of the well to be negative when the reset transistor resets the potential of the charge-voltage conversion section.
The solid-state imaging device according to claim 1, wherein a potential barrier below a gate of the transfer transistor is higher than an overflow path of an optoelectronic conversion section.
The solid-state imaging device according to claim 1, further comprising the voltage source for reducing a voltage to be applied to a gate of the transfer transistor when the voltage setting means sets the voltage of the well to be negative.
The solid-state imaging device according to claim 1, wherein a third transistor converts the signal charge provided by the transfer transistor into a signal voltage.
A method of processing signals with a solid-state imaging device comprising:
- providing a pixel section including an array of a plurality of unit pixels each formed in one or more well regions on a substrate, each unit pixel having one or more photodiode regions, a first transistor transfering charge to a node and a second transistor resetting the node;
- and
- applying a well region input voltage from a voltage source when the second transistor resets the node.
Dependencies are inferred from the claim text.