Sputtering method and sputtering apparatus
AssigneeCanon Anelva Corporation
InventorsNobuo YAMAGUCHI, Kazuaki Matsuo
Life of this patent
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Abstract
This invention provides a sputtering method which can generate an electric discharge under practical conditions and maintain the pressure in a plasma space uniform, and a sputtering apparatus used for the same. The sputtering method includes a first gas introduction step (step S403) of introducing a process gas from a first gas introduction port formed in a sputtering space defined by a deposition shield plate, a substrate holder, and the target which are disposed in a process chamber, a voltage application step (step S407) of applying a voltage to the target after the first gas introduction step, and a second gas introduction step (step S405) of introducing a process gas from a second gas introduction port formed outside the sputtering space.
Claims8
A sputtering method by applying a voltage to a target in a process chamber, comprising:
- a first gas introduction step of introducing a process gas from a first gas introduction port formed in a sputtering space defined by a deposition shield plate, a substrate holder, and the target which are disposed in the process chamber;
- a voltage application step of applying the voltage to the target after the first gas introduction step;
- and
- a second gas introduction step of introducing a process gas from a second gas introduction port formed outside the sputtering space.
A sputtering apparatus comprising:
- a process chamber;
- a substrate holder disposed in said process chamber;
- a target holder which is disposed in said process chamber and configured to hold a target;
- a deposition shield plate which is disposed in said process chamber and forms a sputtering space between said target holder and said substrate holder;
- a first gas introduction port which is formed in the sputtering space and configured to introduce a process gas;
- a second gas introduction port which is formed outside the sputtering space and configured to introduce a process gas;
- and
- a control unit which performs a first gas introduction step of introducing a process gas from the first gas introduction port;
- a voltage application step of applying the voltage to the target after the first gas introduction step;
- and
- a second gas introduction step of introducing a process gas from the second gas introduction port.
Dependencies are inferred from the claim text.