US 2012/0233579 A1 · METHOD FOR IMPROVING THE RADIO FREQUENCY LINEARITY OF SILICON-ON-INSULATOR MOSFET CIRCUITS

Abstract

A method for improving the radio frequency linearity of SOI MOSFET circuits is disclosed. In particular, a method for determining output conductance transition-free body resistances (“Rbody”) for SOI MOSFETs used in SOI MOSFET circuits to eliminate their output conductance transition in the radio frequency range is disclosed. The Rbody of the SOI MOSFETs can be adjusted by changing the number of fingers, i.e., gates, in an SOI MOSFET and/or varying other layout parameters, such as finger width. The transition-free SOI MOSFETs result in improved linearity of mixed-signal, radio-frequency, analog integrated circuits, where body-contacted SOI MOSFETs are preferred because a high degree of device matching is required.

Claims18

Dependent claims

A method for improving the radio frequency linearity of silicon-on-insulator (“SOI”) metal-oxide-semiconductor field-effect transistor (“MOSFET”) circuits, comprising:

receiving a circuit design including one or more SOI MOSFETs, each SOI MOSFET having a first body resistance;
simulating the received circuit including the one or more SOI MOSFETs with the first body resistances;
determining first biasing points of the received circuit based on the simulation of the received circuit including the one or more SOI MOSFETs with the first body resistances;
computing a second body resistance for each of the one or more SOI MOSFETs in the received circuit;
simulating the received circuit including the one or more SOI MOSFETs with the second body resistances;
determining second biasing points of the received circuit based on the simulation of the received circuit including the one or more SOI MOSFETs with the second body resistances;
receiving an indication that the second biasing points are equal to the first biasing points;
and
in response to reception of the indication that the second biasing points are equal to the first biasing points, storing circuit parameters of the received circuit with the one or more SOI MOSFETs having transition-free body resistances.

6 more elements

A system comprising at least one processor connected to at least one computer-readable medium, wherein the at least one processor is configured to:

receive a circuit design including one or more SOI MOSFETs, each SOI MOSFET having a first body resistance;
simulate the received circuit including the one or more SOI MOSFETs with the first body resistances;
determine first biasing points of the received circuit based on the simulation of the received circuit including the one or more SOI MOSFETs with the first body resistances;
compute a second body resistance for each of the one or more SOI MOSFETs in the received circuit;
simulate the received circuit including the one or more SOI MOSFETs with the second body resistances;
determine second biasing points of the received circuit based on the simulation of the received circuit including the one or more SOI MOSFETs with the second body resistances;
receive an indication that the second biasing points are equal to the first biasing points;
and
in response to reception of the indication that the second biasing points are equal to the first biasing points, store circuit parameters of the received circuit with the one or more SOI MOSFETs having transition-free body resistances.

6 more elements

A tangible computer-readable medium having embodied thereon a computer program for improving the radio frequency linearity of silicon-on-insulator (“SOI”) metal-oxide-semiconductor field-effect transistor (“MOSFET”) circuits, the computer program comprising one or more code segments that, when executed, cause at least one processor to:

receive a circuit design including one or more SOI MOSFETs, each SOI MOSFET having a first body resistance;
simulate the received circuit including the one or more SOI MOSFETs with the first body resistances;
determine first biasing points of the received circuit based on the simulation of the received circuit including the one or more SOI MOSFETs with the first body resistances;
compute a second body resistance for each of the one or more SOI MOSFETs in the received circuit;
simulate the received circuit including the one or more SOI MOSFETs with the second body resistances;
determine second biasing points of the received circuit based on the simulation of the received circuit including the one or more SOI MOSFETs with the second body resistances;
receive an indication that the second biasing points are equal to the first biasing points;
and
in response to reception of the indication that the second biasing points are equal to the first biasing points, store circuit parameters of the received circuit with the one or more SOI MOSFETs having transition-free body resistances.

6 more elements

Dependencies are inferred from the claim text.

Method for improving the radio frequency linearity of silicon-on-insulator mosfet circuits

Life of this patent

Method for improving the radio frequency linearity of silicon-on-insulator mosfet circuits

Life of this patent

Abstract

Claims18