Method for the construction of vertical power transistors with differing powers by combination of pre-defined part pieces
AssigneesAlpha Microelctronics GmbH, X-Fab Semiconductor Foundries AG
InventorsRalf Lerner, Wolfgang Miesch
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Abstract
A method for designing a first vertical MOS power transistor having a specified design power level. The method comprises the steps of composing a layout of the vertical MOS power transistor as a combination of at least partly differing layout part pieces, each of the part pieces having known design data, the part pieces including at least one first layout part piece comprising a given number of single transistor cells, and adjusting the specified design power level of the first vertical MOS power transistor by using the known design data of the part pieces and based on the layout combination of the part pieces.
Claims10
A method for designing a vertical metal oxide semiconductor (MOS) power transistor having a specified on-resistance, the method comprising:
- composing a complete layout of the vertical MOS power transistor as a combination of at least partly differing layout part pieces, said part pieces defining the layout of the vertical MOS power transistor, each part piece having known design data and known electrical parameters, wherein at least some of said part pieces are first layout part pieces, and each said first layout part piece contains at least a plurality of single transistor cells and an edge portion;
- and
- adjusting the specified on-resistance by adjusting the number of said first layout part pieces used in the layout of the vertical MOS power transistor.
A method for designing a vertical metal oxide semiconductor (MOS) power transistor having a specified on-resistance, the method comprising:
- composing a complete layout of the vertical MOS power transistor as a combination of at least partly differing layout part pieces, said part pieces defining the layout of the vertical MOS power transistor, each part piece having known design data and known electrical parameters, wherein at least some of said part pieces are first layout part pieces, each said first layout part piece containing at least a plurality of single transistor cells;
- and
- adjusting the specified on-resistance by adjusting the number of said first layout part pieces used in the layout of the vertical MOS power transistor;
- wherein part pieces having the same edge portion include a specified number of identical single transistor cells having the same geometrical arrangement.
A system for designing vertical metal oxide semiconductor (MOS) power transistors having differing on-resistances, the system comprising:
- a computer aided platform for generating a layout from given layout part pieces according to a selected dividing grid, said layout defining the construction of the vertical MOS power transistors, said part pieces defining the structure of the vertical MOS power transistors;
- and
- two or more differing part pieces having differing functions and corresponding design data, wherein first layout part pieces having a specified plurality of identical single transistor cells are provided and part pieces are provided that can be combined together with said first layout part pieces into a layout of a complete vertical MOS power transistor and wherein an on-resistance of the layouts of the vertical MOS power transistors is defined by the number of said first layout part pieces.
Dependencies are inferred from the claim text.