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US 2012/0232182 A1Published application
Nanoimprint resist
AssigneesHon Hai Precision Industry Co., Ltd., Tsinghua University
InventorsZHEN-DONG ZHU, QUN-QING LI, LI-HUI ZHANG, MO CHEN
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Abstract
A nanoimprint resist includes a hyperbranched polyurethane oligomer, a perfluoropolyether, a methylmethacrylate, a diluent solvent, and a photo initiator. The hyperbranched polyurethane oligomer can be polymerized by a copolymerization of trimellitic anhydride, ethylene mercaptan, and epoxy acrylic acid. The hyperbranched polyurethane oligomer can also be polymerized by a ring-opening copolymerization epoxy acrylic acid and ethylene glycol.
Claims11
A nanoimprint resist comprising:
- a hyperbranched polymer oligomer (HP);
- a perfluoropolyether (PFPE);
- a methylmethacrylate (MMA);
- a diluent solvent;
- and
- a photo initiator.
3 more elements
Dependencies are inferred from the claim text.