Back to results
US 2012/0231631 A1Published application
Plasma generating apparatus and plasma etching method using the same
OwnerHongseub KIMinventor
Life of this patent
Estimating the term…
Abstract
A plasma generating apparatus and a plasma etching method are provided. The apparatus includes a chamber, a barrier, a susceptor, and a Radio Frequency (RF) power. The chamber forms a reaction space isolated from the external. The barrier divides the chamber into an upper chamber and a lower chamber. The barrier has a plurality of through-holes through formed to communicate the upper chamber and the lower chamber. The susceptor is installed in the lower chamber. The RF power supplies a bias power to the susceptor.
Claims19
A plasma generating apparatus comprising:
- a chamber for forming a reaction space isolated from the external;
- a barrier for dividing the chamber into an upper chamber and a lower chamber, the barrier having a plurality of through-holes through formed to communicate the upper chamber and the lower chamber;
- a susceptor installed in the lower chamber;
- and
- a Radio Frequency (RF) power for supplying a bias power to the susceptor.
2 more elements
A plasma etching method comprising:
- an upper chamber introduction step in which a reaction gas is introduced into an upper chamber;
- a lower chamber introduction step in which the reaction gas flows into a lower chamber via through-holes of a barrier;
- a plasma generation step of converting the reaction gas of the lower chamber into a plasma state;
- and
- a reaction-products discharge step of, at texturing reaction of the substrate by plasma, forcibly discharging reaction products generated within the lower chamber, out of the chamber.
2 more elements
Dependencies are inferred from the claim text.