Self-aligned dual damascene beol structures with patternable low- k material and methods of forming same

A method of forming a self-aligned dual-damascene interconnect structure comprising:

• providing a first patternable low-k material on top of a substrate;
• forming at least one first interconnect pattern within the first patternable low-k material without utilizing a separate photoresist material, wherein the at least one first interconnect pattern has a first dimension that is larger than a second dimension of a final first interconnect pattern;
• providing a second patternable low-k material on top of the first patternable low-k material including within the at least one first interconnect pattern;
• forming at least one second interconnect pattern that is different from the at least one first interconnect pattern within the second patternable low-k material without utilizing a separate photoresist material, wherein a portion of the second patternable low-k material remains in the at least one first interconnect pattern of said first dimension to provide the final first interconnect pattern having the second dimension;
• curing at least said second patternable low-k material into a dielectric material having a dielectric constant of not more than 4.3;
• and
• filling the final first interconnect pattern and the second interconnect pattern with a conductive material.