Method of manufacturing semiconductor device
AssigneeSumitomo Electric Industries, Ltd.
InventorTakeyoshi MASUDA
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Abstract
A method of manufacturing a MOSFET includes the steps of preparing a substrate with an epitaxial growth layer made of silicon carbide, performing ion implantation into the substrate with the epitaxial growth layer, forming a protective film made of silicon nitride on the substrate with the epitaxial growth layer into which the ion implantation was performed, and heating the substrate with the epitaxial growth layer on which the protective film was formed to a temperature range of 1600° C. or more in an atmosphere containing gas including a nitrogen atom.
Claims4
A method of manufacturing a semiconductor device, comprising the steps of:
- preparing a substrate made of silicon carbide;
- performing ion implantation into said substrate;
- forming a protective film made of silicon nitride on said substrate into which said ion implantation was performed;
- and
- heating said substrate on which said protective film was formed to a temperature range of 1600° C. or more in an atmosphere containing gas including a nitrogen atom.
Dependencies are inferred from the claim text.