Reverse construction integrated circuit
AssigneeMicron Technology, Inc.
InventorsDavid H. Wells, H. Montgomery Manning
Life of this patent
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Abstract
A method of fabricating a memory cell comprises forming a plurality of doped semiconductor layers on a carrier substrate. The method further comprises forming a plurality of digit lines separated by an insulating material. The digit lines are arrayed over the doped semiconductor layers. The method further comprises etching a plurality of trenches into the doped semiconductor layers. The method further comprises depositing an insulating material into the plurality of trenches to form a plurality of electrically isolated transistor pillars. The method further comprises bonding at least a portion of the structure formed on the carrier substrate to a host substrate. The method further comprises separating the carrier substrate from the host substrate.
Claims20
A method comprising:
- forming conductive lines over semiconductor material on a carrier substrate;
- after forming the conductive lines, placing at least the conductive lines on a host substrate;
- and
- removing at least a portion of the carrier substrate.
A method comprising:
- forming access devices over semiconductor material on a carrier substrate;
- after forming the access devices, placing at least the access devices on a host substrate;
- and
- removing at least a portion of the carrier substrate.
A method comprising:
- forming conductive material over semiconductor material on a carrier substrate;
- after forming the conductive material, forming oxide over the conductive material;
- and
- after forming the oxide, bonding the oxide to a host substrate, wherein the conductive material is over the oxide and the host substrate.
Dependencies are inferred from the claim text.