Methods of fabricating a semiconductor device having metallic storage nodes
AssigneeSamsung Electronics Co., Ltd.
InventorsMongsup Lee, Inseak Hwang, Byoung-Yong Gwak, Sukhun Choi, Sang-Jun Lee
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Abstract
The present disclosure describes methods of fabricating a semiconductor device. An exemplary method includes forming a metal pattern on a substrate and etching the metal pattern using an etchant including at least an alkaline solution and an oxidant to form a metal electrode, where at least a portion of the surface of the metal electrode is uneven.
Claims20
A method of fabricating a semiconductor device, the method comprising:
- forming a metal pattern on a substrate;
- forming a supporter to support the metal pattern;
- and
- etching the metal pattern using an etchant including at least an alkaline solution and an oxidant to form a metal electrode,
- wherein at least a part of a surface of the metal electrode is uneven.
A method of fabricating a dynamic random access memory (DRAM) cell, the method comprising:
- forming a substrate including one or more electrodes and an active region;
- sequentially forming a first mold layer, a support layer and a second mold layer on the substrate;
- forming a metal pattern penetrating the first mold layer, the support layer and the second mold layer;
- and
- wet etching at least a part of a surface of the metal pattern using a wet etchant to form a metal electrode;
- wherein the part of the surface of the metal electrode that has been formed by etching is uneven.
A method of fabricating a dynamic random access memory (DRAM) cell, the method comprising:
- forming a substrate including one or more electrodes and an active region;
- sequentially forming a first mold layer, a support layer and a second mold layer on the substrate;
- forming a metal pattern penetrating the first mold layer, the support layer and the second mold layer;
- and
- etching the metal pattern to form a metal electrode;
- wherein a first part of a surface of the metal electrode is perpendicular to a surface of the substrate and a second part of the surface of the metal electrode is parallel with a surface of the substrate, and
- the first and second parts of a surface of the metal electrode include a jagged surface.
Dependencies are inferred from the claim text.