Methods Of Depositing Antimony-Comprising Phase Change Material Onto A Substrate And Methods Of Forming Phase Change Memory Circuitry
AssigneeMicron Technology, Inc.
InventorsTimothy A. Quick, Eugene P. Marsh
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Abstract
A method of depositing an antimony-comprising phase change material onto a substrate includes providing a reducing agent and vaporized Sb(OR)3 to a substrate, where R is alkyl, and forming there-from antimony-comprising phase change material on the substrate. The phase change material has no greater than 10 atomic percent oxygen, and includes another metal in addition to antimony.
Claims15
1-25. (canceled)
A method of depositing a phase-change material onto a substrate, comprising:
- providing a vaporized compound consisting of Sb(OR)3 to a substrate, where R is alkyl;
- forming an antimony-comprising phase change material comprising no greater than 10 atomic percent oxygen.
A method of forming phase change memory circuitry, comprising:
- forming an electrode material over the substrate;
- providing a vaporized compound consisting of Sb(OR)3 over the electrode material, where R is alkyl;
- forming an Sb-comprising phase change material over the electrode material, the phase change material comprising less than 10 atomic percent oxygen;
- and
- forming an outer electrode material over the phase change material.
The method of claim 9 wherein the phase change material comprises at least one additional metal.
Dependencies are inferred from the claim text.