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US 2012/0223310 A1Published application
Semiconductor memory device and method for manufacturing the same
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorsKosei NODA, Yuta ENDO
Life of this patent
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Abstract
A semiconductor memory device includes a transistor and a capacitor. The transistor includes: an insulating film in which a groove portion is provided; a pair of electrodes separated so that the groove portion is sandwiched therebetween; an oxide semiconductor film which is in contact with the pair of electrodes and side surfaces and a bottom surface of the groove portion and has a thickness value smaller than a depth value of the groove portion; a gate insulating film covering the oxide semiconductor film; and a gate electrode provided to overlap with the oxide semiconductor film with the gate insulating film positioned therebetween.
Claims21
A semiconductor memory device comprising:
- a transistor comprising:
- a pair of electrodes;
- an insulating film below the pair of electrodes, the insulating film including a groove portion,
- an oxide semiconductor film in contact with the pair of electrodes and side surfaces of the groove portion in the insulating film;
- a gate insulating film covering the oxide semiconductor film;
- and
- a gate electrode overlapping with the oxide semiconductor film with the gate insulating film positioned therebetween;
- and
- a capacitor,
- wherein the side surfaces of the groove portion are coextensive with side surfaces of the pair of electrodes.
7 more elements
A semiconductor memory device comprising:
- a pair of electrodes;
- an insulating film below the pair of electrodes, the insulating film including a groove portion,
- an oxide semiconductor film in contact with the pair of electrodes and side surfaces of the groove portion in the insulating film;
- a gate insulating film covering the oxide semiconductor film;
- a gate electrode overlapping with the oxide semiconductor film with the gate insulating film positioned therebetween;
- and
- a conductive film overlapping with one of the pair of electrodes with a dielectric film positioned therebetween,
- wherein the side surfaces of the groove portion are coextensive with side surfaces of the pair of electrodes,
- wherein the conductive film includes the same material and is in the same layer as the gate electrode, and
- wherein the dielectric film includes the same material and is in the same layer as the gate insulating film.
7 more elements
A semiconductor memory device comprising:
- an insulating film including a groove portion;
- a pair of electrodes which is over the insulating film and separated so that the groove portion is sandwiched therebetween;
- an oxide semiconductor film in contact with the pair of electrodes and side surfaces of the groove portion, the oxide semiconductor film having a thickness value smaller than a depth value of the groove portion;
- a gate insulating film covering the oxide semiconductor film;
- a gate electrode overlapping with the oxide semiconductor film with the gate insulating film positioned therebetween;
- and
- a conductive film overlapping with one of the pair of electrodes with a dielectric film positioned therebetween,
- wherein the conductive film includes the same material and is in the same layer as the gate electrode, and
- wherein the dielectric film includes the same material and is in the same layer as the gate insulating film.
6 more elements
A semiconductor memory device comprising:
- an insulating film including a first groove portion and a second groove portion;
- a pair of electrodes which is over the insulating film and separated so that the first groove portion is sandwiched therebetweeen;
- an oxide semiconductor film in contact with the pair of electrodes and side surfaces of the first groove portion, the oxide semiconductor film having a thickness value smaller than a depth value of the first groove portion;
- a gate insulating film covering the oxide semiconductor film;
- a gate electrode overlapping with the oxide semiconductor film with the gate insulating film positioned therebetween;
- and
- a conductive film overlapping with one of the pair of electrodes with a dielectric film positioned therebetween,
- wherein the conductive film includes the same material and is in the same layer as the gate electrode,
- wherein the dielectric film includes the same material and is in the same layer as the gate insulating film, and
- wherein the one of the pair of electrodes, the dielectric film, and the conductive film overlap with the second groove portion.
7 more elements
A method for manufacturing a semiconductor memory device comprising:
- forming an insulating film over a substrate;
- forming a first conductive film over the insulating film;
- processing the first conductive film to form a pair of electrodes;
- processing the insulating film with use of the pair of electrodes as a mask to have a groove portion;
- forming an oxide semiconductor film which is in contact with the pair of electrodes and side surfaces of the groove portion and has a thickness value smaller than a depth value of the groove portion;
- forming a gate insulating film to cover the oxide semiconductor film;
- and
- forming a gate electrode overlapping with the oxide semiconductor film with the gate insulating film positioned therebetween and a second conductive film overlapping with one of the pair of electrodes with a dielectric film positioned therebetween,
- wherein the second conductive film includes the same material and is in the same layer as the gate electrode, and
- wherein the dielectric film includes the same material and is in the same layer as the gate insulating film.
7 more elements
A method for manufacturing a semiconductor memory device comprising:
- forming an insulating film over a substrate;
- forming a first conductive film over the insulating film;
- processing the first conductive film to form a hard mask;
- processing the insulating film with use of the hard mask as a mask to have a groove portion;
- processing the hard mask to form a pair of electrodes;
- forming an oxide semiconductor film which is in contact with the pair of electrodes and side surfaces of the groove portion and has a thickness value smaller than a depth value of the groove portion;
- forming a gate insulating film to cover the oxide semiconductor film;
- and
- forming a gate electrode overlapping with the oxide semiconductor film with the gate insulating film positioned therebetween and a second conductive film overlapping with one of the pair of electrodes with a dielectric film positioned therebetween,
- wherein the second conductive film includes the same material and is in the same layer as the gate electrode, and
- wherein the dielectric film includes the same material and is in the same layer as the gate insulating film.
8 more elements
A method for manufacturing a semiconductor memory device comprising:
- forming an insulating film over a substrate;
- processing the insulating film to have a groove portion;
- forming a first conductive film over the insulating film;
- processing the first conductive film to form a pair of electrodes separated so that the groove portion is sandwiched therebetween;
- forming an oxide semiconductor film which is in contact with the pair of electrodes and side surfaces of the groove portion and has a thickness value smaller than a depth value of the groove portion;
- forming a gate insulating film to cover the oxide semiconductor film;
- and
- forming a gate electrode overlapping with the oxide semiconductor film with the gate insulating film positioned therebetween and a second conductive film overlapping with one of the pair of electrodes with a dielectric film positioned therebetween,
- wherein the second conductive film includes the same material and is in the same layer as the gate electrode, and
- wherein the dielectric film includes the same material and is in the same layer as the gate insulating film.
7 more elements
A method for manufacturing a semiconductor memory device comprising:
- forming an insulating film over a substrate;
- forming a first conductive film over the insulating film;
- processing the first conductive film to form a pair of electrodes;
- processing the insulating film to have a groove portion between the pair of electrodes;
- forming an oxide semiconductor film which is in contact with the pair of electrodes and side surfaces of the groove portion and has a thickness value smaller than a depth value of the groove portion;
- forming a gate insulating film to cover the oxide semiconductor film;
- and
- forming a gate electrode overlapping with the oxide semiconductor film with the gate insulating film positioned therebetween and a second conductive film overlapping with one of the pair of electrodes with a dielectric film positioned therebetween,
- wherein the second conductive film includes the same material and is in the same layer as the gate electrode, and
- wherein the dielectric film includes the same material and is in the same layer as the gate insulating film.
7 more elements
A method for manufacturing a semiconductor memory device comprising:
- forming an insulating film over a substrate;
- processing the insulating film to include a first groove portion and a second groove portion;
- forming a first conductive film over the insulating film;
- processing the first conductive film to form a pair of electrodes separated so that the first groove portion is sandwiched therebetween;
- forming an oxide semiconductor film which is in contact with the pair of electrodes and side surfaces of the first groove portion and has a thickness value smaller than a depth value of the first groove portion;
- forming a gate insulating film to cover the oxide semiconductor film and one of the pair of electrodes;
- and
- forming a gate electrode overlapping with the oxide semiconductor film with the gate insulating film positioned therebetween and a second conductive film overlapping with the one of the pair of electrodes and the second groove portion with a dielectric film positioned therebetween,
- wherein the second conductive film includes the same material and is in the same layer as the gate electrode, and
- wherein the dielectric film includes the same material and is in the same layer as the gate insulating film.
7 more elements
Dependencies are inferred from the claim text.